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| Semiconductor MCTV35P60F1D P-Type MOS Controlled with Anti-Parallel Diode Package JEDEC STYLE TO-247 April 1999 PROCE S AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor (MCT) OLET S OBS Features * 35A, -600V * VTM = -1.35V (Max) at I = 35A and +150oC * 800A Surge Current Capability * 800A/s di/dt Capability * MOS Insulated Gate Control * 50A Gate Turn-Off Capability at +150oC * Anti-Parallel Diode A A K GR G Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. This device features a discrete anti-parallel diode that shunts current around the MCT in the reverse direction without introducing carriers into the depletion region. PART NUMBER INFORMATION PART NUMBER MCTV35P60F1D PACKAGE TO-247 BRAND M35P60F1D Symbol G A K NOTE: When ordering, use the entire part number. Formerly developmental type TA9789 (MCT) and TA49054 (diode). Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified UNITS V A A A A V V A/s W W/oC oC oC MCTV35P60F1D Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM -600 Continuous Cathode Current (See Figure 2) TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK25 60 TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK115 35 Non-repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IKSM 800 Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IKC 50 Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGA1 20 Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGAM 25 Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt See Figure 11 Rate of Change of Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .di/dt 800 Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 178 Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43 Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to +150 Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 (0.063" (1.6mm) from case for 10s) NOTE: 1. Maximum Pulse Width of 250s (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1999 File Number 3694.4 2-8 Specifications MCTV35P60F1D Electrical Specifications PARAMETER Peak Off-State Blocking Current TC = +25oC, Unless Otherwise Specified SYMBOL IDRM TEST CONDITIONS VKA = -600V VGA = +18V On-State Voltage VTM IK = IK115 VGA = -7V Gate-Anode Leakage Current Input Capacitance IGAS VGA = 20V VKA = -20V, TJ = +25oC VGA = +18V L = 200H, IK = IK115 RG = 1, VGA = +18V, -7V TJ = +125oC VKA = -300V TC = +150oC TC = +25oC TC = +150oC TC = +25oC MIN TYP MAX 5 200 1.35 1.4 100 UNITS mA A V V nA CISS - 5 - nF Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy Thermal Resistance (MCT) Thermal Resistance (Diode) Diode Forward Voltage Diode Reverse Recovery Time tD(ON)I - 140 - ns tRI tD(OFF)I tFI EOFF RJC RJC VKA tRR - 180 640 1.1 5.6 .6 1.1 - 1.4 .7 1.2 1.4 600 ns ns s mJ oC/W oC/W IKA = 35A IKA = 35A, di/dt = 100A/s - V ns Typical Performance Curves 100 50 IK, CATHODE CURRENT (A) 30 20 10 5 3 2 1 0 0.5 1.0 1.5 VTM, CATHODE VOLTAGE (V) 2.0 TJ = +150oC TJ = -40oC TJ = +25oC PULSE TEST PULSE DURATION = 250s DUTY CYCLE < 2% 100 IK, DC CATHODE CURRENT (A) TJ = +150oC 80 PACKAGE LIMIT 60 MCT SWITCHING LIMIT 40 DIODE 20 MCT 0 20 40 60 80 100 120 140 160 TC , CASE TEMPERATURE (oC) FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE (TYPICAL) FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT 2-9 MCTV35P60F1D Typical Performance Curves (Continued) TJ = +150oC, RG = 1, L = 200H 200 175 150 125 VKA = -300V 100 75 50 0 10 20 30 40 IK, CATHODE CURRENT (A) 50 60 VKA = -200V tD(OFF)I, TURN-OFF DELAY (ns) tD(ON)I, TURN-ON DELAY (ns) 1100 1000 900 800 700 600 500 400 VKA = -200V VKA = -300V TJ = +150oC, RG = 1, L = 200H 0 10 20 30 40 50 60 IK, CATHODE CURRENT (A) FIGURE 3. TURN-ON DELAY vs CATHODE CURRENT (TYPICAL) TJ = +150oC, RG = 1, L = 200mH 200 FIGURE 4. TURN-OFF DELAY vs CATHODE CURRENT (TYPICAL) TJ = +150oC, RG = 1, L = 200H 1.5 tRI,RISE TIME (ns) 100 VKA = -300V tFI, FALL TIME (s) 150 VKA = -200V 1.25 VKA = -200V 1 VKA = -300V 0.75 50 0 0.5 0 10 20 30 40 50 60 IK, CATHODE CURRENT (A) 0 10 20 30 40 50 60 IK, CATHODE CURRENT (A) FIGURE 5. TURN-ON RISE TIME vs CATHODE CURRENT (TYPICAL) FIGURE 6. TURN-OFF FALL TIME vs CATHODE CURRENT (TYPICAL) EOFF, TURN-OFF SWITCHING LOSS (mJ) 5 EON,TURN-ON SWITCHING LOSS (mJ) TJ = +150oC, RG = 1, L = 200H 10 5 TJ = +150oC, RG = 1, L = 200H 3 VKA = -300V VKA = -300V 2 VKA= -200V VKA = -200V 1 0.5 1 0.5 0.1 0 10 20 30 40 IK, CATHODE CURRENT (A) 50 60 0 10 30 40 20 IK, CATHODE CURRENT (A) 50 60 FIGURE 7. TURN-ON ENERGY LOSS vs CATHODE CURRENT (TYPICAL) FIGURE 8. TURN-OFF ENERGY LOSS vs CATHODE CURRENT (TYPICAL) 2-10 MCTV35P60F1D Typical Performance Curves (Continued) fMAX, MAX OPERATING FREQUENCY (kHz) 100 50 30 20 VKA = -300V 10 5 3 2 1 5 10 20 30 50 100 IK, CATHODE CURRENT (A) fMAX1 = 0.05/ tD(ON)I + tD(OFF)I) fMAX2 = (PD - PC) / ESWITCH PD: ALLOWABLE DISSIPATION PC: CONDUCTION DISSIPATION (PC DUTY FACTOR = 50%) RJC = 0.7oC/W VKA = -200V TC = +90oC, L = 200H PEAK CATHODE CURRENT (A) 60 50 40 30 20 10 0 TURN-OFF SAFE OPERATING AREA TJ = +150oC, VGA = 18V, L = 100H 0 -100 -200 -300 -400 -500 -600 VKA, PEAK TURN OFF VOLTAGE (V) FIGURE 9. OPERATING FREQUENCY vs CATHODE CURRENT (TYPICAL) TJ = +150oC, VGA = 18V -725 VDRM, BREAKDOWN VOLTAGE (V) -700 -675 -650 -625 -600 -575 -550 -525 -500 -475 -450 -425 0.1 1 10 100 dv/dt (V/s) 1000 10000 FIGURE 10. TURN-OFF CAPABILITY vs ANODE-CATHODE VOLTAGE 200 CS = 0.1F, TJ = +150oC 100 VSPIKE, SPIKE VOLTAGE (V) 50 CS = 0.1F, TJ = +25oC CS = 1F, TJ = +150oC 20 10 CS = 2F, TJ = +150oC 5 CS = 1F, TJ = +25oC CS = 2F, TJ = +25oC 2 0 5 10 15 20 25 di/dt (A/s) 30 35 40 FIGURE 11. BLOCKING VOLTAGE vs dv/dt FIGURE 12. SPIKE VOLTAGE vs di/dt (TYPICAL) 100 IKA, CATHODE-ANODE CURRENT (A) 50 30 20 TJ = +150oC 10 5 3 2 1 TJ = +25oC TJ = -40oC tRR, REVERSE RECOVERY TIMES (ns) PULSE TEST PULSE DURATION = 250s DUTY CYCLE < 2% 1,000 500 300 200 100 50 tB 30 20 10 tA tRR TJ = +25oC, di/dt = 100A/s 0 0.5 1 1.5 VAK, ANODE-CATHODE VOLTAGE (V) 2 0 10 20 30 40 IKA , CATHODE-ANODE CURRENT (A) FIGURE 13. DIODE CATHODE-ANODE CURRENT vs VOLTAGE (TYPICAL) FIGURE 14. DIODE REVERSE RECOVERY TIMES vs CURRENT (TYPICAL) 2-11 MCTV35P60F1D Test Circuits VG 200H 1 + - IK VK 9V + + 20V 10k CS DUT IK 4.7k + DUT FIGURE 15. SWITCHING TEST CIRCUIT FIGURE 16. VSPIKE TEST CIRCUIT MAXIMUM RISE AND FALL TIME OF VG IS 200ns VG 10% 90% VG di/dt -VKA 90% IK 10% tD(OFF)I tFI tRI tD(ON)I IK VSPIKE VTM VAK FIGURE 17. SWITCHING TEST WAVEFORMS FIGURE 18. VSPIKE TEST WAVEFORMS Operating Frequency Information Operating frequency information for a typical device (Figure 9) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs cathode current (IAK) plots are possible using the information shown for a typical unit in Figures 3 to 8. The operating frequency plot (Figure 9) of a typical device shows fMAX1 or fMAX2 whichever is lower at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (tD(ON)I + tD(OFF)I). tD(ON)I + tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(ON)I is defined as the 10% point of the leading edge of the input pulse and the point where the cathode current rises to 10% of its maximum value. tD(OFF)I is defined as the 90% point of the trailing edge of the input pulse and the point where the cathode current falls to 90% of its maximum value. Device delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC) / (EON+EOFF). The allowable dissipation (PD) is defined by PD = (TJMAX - TC) / RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 9) and the conduction losses (PC) are approximated by PC = (VAK * IAK) / (duty factor/100). EON is defined as the sum of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the anodecathode voltage equals saturation voltage (VAK = VTM). EOFF is defined as the sum of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the cathode current equals zero (IK = 0). 2-12 + - 500 VA 9V - |
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